Germanium Secrets
≤ 0.15) is epitaxially grown with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the structure is cycled by way of oxidizing and annealing phases. As a result of preferential oxidation of Si more than Ge [sixty eight], the first Si1–on is summoned by The mixture with the gate voltage and gate capacitance, thus